Description
General part information
AIMZH120R020M1TXKSA1
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | AIMZH120R020M1TXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On) | 18 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 82 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2667 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | PG-TO247-4-11 |
| Power Dissipation (Max) | 429 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 25 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -5 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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