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STI6N80K5

STI6N80K5

Obsolete
STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK

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STI6N80K5

STI6N80K5

Obsolete
STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK

Find alt

Description

General part information

STI6N80K5

MOSFET N-CH 800V 4.5A I2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSTI6N80K5
Current - Continuous Drain (Id) (Tc)4.5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)7.5 nC
Input Capacitance (Ciss) (Max)255 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262 (I2PAK)
Power Dissipation (Max)85 W
Rds On (Max)1.6 Ohm, 1.6 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

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CAD

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Documents

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