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GT035N12T

GT035N12T

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Goford Semiconductor

MOSFET N-CH 120V 180A 230W 3.8M

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GT035N12T

GT035N12T

Active
Goford Semiconductor

MOSFET N-CH 120V 180A 230W 3.8M

Find alt

Description

General part information

GT035N12T

MOSFET N-CH 120V 180A 230W 3.8M

Technical Specifications

Parameters and characteristics for this part

SpecificationGT035N12T
Current - Continuous Drain (Id) (Tc)180 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)116 nC
Input Capacitance (Ciss) (Max)8336 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)230 W
Rds On (Max)3.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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