BCP5610TA

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Diodes Inc

TRANS GP BJT NPN 80V 1A 2000MW 4-PIN(3+TAB) SOT-223 T/R

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Active

Diodes Inc

TRANS GP BJT NPN 80V 1A 2000MW 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5610TA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN, 80V, 1A, SOT223

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc BCP5610TA	150 °C	-65 °C	100 nA	63 hFE	TO-261-4 TO-261AA	Surface Mount	SOT-223-3	2 W	150 MHz	1 A	NPN	80 V	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 80V, 1A, SOT223

Technical documentation and resources