CY15V108QSN-108BKXI is an EXCELON™ non-volatile ultra high-performance ferroelectric RAM (F-RAM). A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. Unlike serial flash, the performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. This is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.