Specification	IMW40R045M2HXKSA1

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	710 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3-U06
Power Dissipation (Max)	130 W
Rds On (Max)	56.2 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.6 V

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