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BGSX24M2U16E6327XTSA1

BGSX24M2U16E6327XTSA1

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INFINEON

ANTENNA DEVICES

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BGSX24M2U16E6327XTSA1

BGSX24M2U16E6327XTSA1

Active
INFINEON

ANTENNA DEVICES

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Description

General part information

BGSX24M2U16E6327XTSA1

The BGSX24M2U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This Dual Pole Four Throw (DP4T) cross-switch offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE control interface. The on-chip controller permits very low power-supply voltage from 1.1 to 1.3 V or the standard supply voltage from 1.65 to 1.95V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.

Technical Specifications

Parameters and characteristics for this part

SpecificationBGSX24M2U16E6327XTSA1
CircuitDP4T
FeaturesDC Blocked
Frequency Range (Max)7.125 GHz
Frequency Range (Min)400 MHz
Impedance50 Ohm
Insertion Loss1.14 dB
Isolation35 dB
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case16-UFLGA Exposed Pad
Package NamePG-ULGA-16-6
RF Type5G, LTE
Test Frequency7.125 GHz
TopologyAbsorptive
Voltage - Supply (Range 1 Maximum)1.3 V
Voltage - Supply (Range 1 Minimum)1.1 V
Voltage - Supply (Range 2 Maximum)1.95 V
Voltage - Supply (Range 2 Minimum)1.65 V

Pricing

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CAD

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Documents

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