ACGRAT105-HF

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Comchip Technology

DIODE GEN PURP 1KV 1A 2010

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Comchip Technology

DIODE GEN PURP 1KV 1A 2010

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	ACGRAT105-HF	ACGRAT105 Series

Capacitance @ Vr, F	8 pF	8 - 8.2 pF
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Grade	Automotive	Automotive
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	2010 (5025 Metric)	2010 (5025 Metric)
Qualification	AEC-Q101	AEC-Q101
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	2010	2010
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V	1 - 930 mV

DIODE 1KV 1A 2-PIN CASE 2010 T/R AUTOMOTIVE AEC-Q101

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Grade	Qualification	Speed	Capacitance @ Vr, F
Comchip Technology ACGRAT105L-HF	930 mV	Standard	175 ░C	-65 C	2010	2010 (5025 Metric)	1 A	1000 V	Surface Mount	5 µA	Automotive	AEC-Q101	200 mA, 500 ns	8.2 pF
Comchip Technology ACGRAT105-HF	1 V	Standard	175 ░C	-65 C	2010	2010 (5025 Metric)	1 A	1000 V	Surface Mount	5 µA	Automotive	AEC-Q101	200 mA, 500 ns	8 pF

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General part information

Diode 1000 V 1A Surface Mount 2010

Technical documentation and resources

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