Technical Specifications
Parameters and characteristics for this part
| Specification | DGD2104S8-13 |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Current - Peak Output (Source, Sink) [custom] | 600 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.5 V, 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 35 ns |
| Rise / Fall Time (Typ) [custom] | 70 ns |
| Supplier Device Package | 8-SO |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.98 | |
| 5000 | $ 0.95 | |||
Description
General part information
DGD2104M Series
The DGD2104M is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD2104M’s high side to switch to 600V in a bootstrap operation.The DGD2104M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction.The DGD2104M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
Documents
Technical documentation and resources