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BYC5-1200PQ - NXPSC06650Q

BYC5-1200PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 5A TO220AC

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BYC5-1200PQ - NXPSC06650Q

BYC5-1200PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 1.2KV 5A TO220AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC5-1200PQ
Current - Average Rectified (Io)5 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)36 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 0.38

Description

General part information

BYC5-1200PQ

Diode 1200 V 5A Through Hole TO-220AC

Documents

Technical documentation and resources

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