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DMN2055U-7 - SOT-23-3

DMN2055U-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMN2055U-7 - SOT-23-3

DMN2055U-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2055U-7
Current - Continuous Drain (Id) @ 25°C4.8 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.3 nC
Input Capacitance (Ciss) (Max) @ Vds400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs38 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.11
1000$ 0.09
Digi-Reel® 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.11
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

DMN2055UW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.