2SA1462-T1B-A
ActiveRenesas Electronics Corporation
BIPOLAR POWER TRANSISTORS
Deep-Dive with AI
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2SA1462-T1B-A
ActiveRenesas Electronics Corporation
BIPOLAR POWER TRANSISTORS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SA1462-T1B-A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Frequency - Transition | 1.8 GHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | SC-59 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1249 | $ 0.24 | |
2SA1462 Series
Bipolar Power Transistors
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) | Package / Case | Mounting Type | Operating Temperature | Transistor Type | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation 2SA1462-T1B-A | 50 hFE | SC-59 | 15 V | SC-59, SOT-23-3, TO-236-3 | Surface Mount | 150 °C | PNP | 100 nA | 1.8 GHz | 200 mW | 200 mV | 50 mA |
Description
General part information
2SA1462 Series
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
Documents
Technical documentation and resources
No documents available