Zenode.ai Logo
Beta
⌘K
Log InSign Up
IRFR120NTRPBF - TO252-3

IRFR120NTRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 9.4 A, 0.21 OHM, TO-252AA, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetIR Part Numbering System+1
IRFR120NTRPBF - TO252-3

IRFR120NTRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 9.4 A, 0.21 OHM, TO-252AA, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetIR Part Numbering System+1

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFR120NTRPBF
Current - Continuous Drain (Id) @ 25°C9.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds330 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs [Max]210 mOhm
Supplier Device PackageTO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.49
10$ 0.94
100$ 0.63
500$ 0.49
1000$ 0.45
Digi-Reel® 1$ 1.49
10$ 0.94
100$ 0.63
500$ 0.49
1000$ 0.45
Tape & Reel (TR) 2000$ 0.41
4000$ 0.38
6000$ 0.36
10000$ 0.36
NewarkEach (Supplied on Cut Tape) 1$ 1.41
10$ 0.96
25$ 0.87
50$ 0.78
100$ 0.69
250$ 0.64
500$ 0.57
1000$ 0.52

Description

General part information

IRFR120 Series

The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.