DMG9926UDM-7

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Diodes Inc

DUAL MOSFET, N CHANNEL, 20 V, 20 V, 4.2 A, 4.2 A, 0.022 OHM

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Diodes Inc

DUAL MOSFET, N CHANNEL, 20 V, 20 V, 4.2 A, 4.2 A, 0.022 OHM

Technical Specifications

Parameters and characteristics for this part

Specification	DMG9926UDM-7

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	856 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	980 mW
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

N-Channel MOSFET

Part	Mounting Type	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMG9926UDM-7	Surface Mount	2 N-Channel (Dual) Common Drain	856 pF	900 mV	28 mOhm	Logic Level Gate	980 mW	8.3 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	SOT-23-6	SOT-26	4.2 A

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General part information

N-Channel MOSFET

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