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2STF2550 - 2STF2550

2STF2550

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -50 V, 1.4 W, -5 A, 70 ROHS COMPLIANT: YES

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2STF2550 - 2STF2550

2STF2550

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -50 V, 1.4 W, -5 A, 70 ROHS COMPLIANT: YES

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification2STF25502STF2550 Series
--
Current - Collector (Ic) (Max)5 A5 A
Current - Collector Cutoff (Max) [Max]100 nA100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]110 hFE110 hFE
Mounting TypeSurface MountSurface Mount
Operating Temperature150 °C150 °C
Package / CaseTO-243AATO-243AA
Power - Max [Max]1.4 W1.4 W
Supplier Device PackageSOT-89-3SOT-89-3
Transistor TypePNPPNP
Vce Saturation (Max) @ Ib, Ic550 mV550 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.43
100$ 0.30
500$ 0.24
1000$ 0.19
Digi-Reel® 1$ 0.51
10$ 0.43
100$ 0.30
500$ 0.24
1000$ 0.19
Tape & Reel (TR) 2500$ 0.17
5000$ 0.16
12500$ 0.15
25000$ 0.15
62500$ 0.14
NewarkEach 1$ 0.81
10$ 0.53
100$ 0.36
500$ 0.29
1000$ 0.27
2500$ 0.21
10000$ 0.20
25000$ 0.20

2STF2550 Series

Low voltage high performance PNP power transistor

PartSupplier Device PackagePower - Max [Max]Current - Collector Cutoff (Max) [Max]Voltage - Collector Emitter Breakdown (Max) [Max]Vce Saturation (Max) @ Ib, IcMounting TypeCurrent - Collector (Ic) (Max)Operating TemperatureTransistor TypePackage / CaseDC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics
2STF2550
SOT-89-3
1.4 W
100 nA
50 V
550 mV
Surface Mount
5 A
150 °C
PNP
TO-243AA
110 hFE
STMicroelectronics
2STF2550
STMicroelectronics
2STF2550
STMicroelectronics
2STF2550

Description

General part information

2STF2550 Series

The 2STF2550 and 2STN2550 are PNP transistors manufactured using new "PB-HCD" (Power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.