STW21N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP., 18.5 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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DocumentsTN1378 AN4250 +16

STW21N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP., 18.5 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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DocumentsTN1378 AN4250 +16

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Technical Specifications

Parameters and characteristics for this part

Specification	STW21N90K5

Current - Continuous Drain (Id) @ 25°C	18.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1645 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	299 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW21N90K5 Series

N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW21N90K5	TO-247-3	900 V	Through Hole	43 nC	30 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	5 V	250 W	18.5 A	N-Channel	1645 pF	299 mOhm	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 5.85
		90	$ 5.24
		300	$ 4.93
		750	$ 4.62
		1500	$ 4.16
Newark	Each	1	$ 10.83
		10	$ 8.97
		25	$ 7.10
		50	$ 6.75
		100	$ 6.40
		250	$ 5.99

Description

General part information

STW21N90K5 Series

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

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STW21N90K5

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STW21N90K5

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Technical Specifications

STW21N90K5 Series

Pricing

Description

STW21N90K5 Series

Documents

TN1378

AN4250

TN1156

AN4337

TN1224

AN2842

UM1575

DS6585

TN1225

AN2344

Product Change Notice EN

Datasheet

Technical Specifications

STW21N90K5 Series