BPV11

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPV11

Current - Collector (Ic) (Max) [Max]	10 mA
Current - Dark (Id) (Max) [Max]	50 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	T 1 3/4, Radial
Package / Case [diameter]	5 mm
Power - Max [Max]	150 mW
Viewing Angle	30 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Dark (Id) (Max) [Max]	Package / Case [diameter]	Package / Case	Orientation	Wavelength	Viewing Angle	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]
Vishay General Semiconductor - Diodes Division BPV11	70 V	10 mA	50 nA	5 mm	Radial T 1 3/4	Top View	850 nm	30 °	Through Hole	100 °C	-40 °C	150 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 850nm Top View Radial, 5mm Dia (T 1 3/4)

Technical documentation and resources