1N1183A

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GeneSiC Semiconductor

DIODE GEN PURP 50V 40A DO203AB

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GeneSiC Semiconductor

DIODE GEN PURP 50V 40A DO203AB

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N1183A	1N1183 Series

Current - Average Rectified (Io)	40 A	35 - 40 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Chassis, Stud Mount	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C	190 - 200 °C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	DO-203AB, DO-5, Stud	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-203AB	DO-203AB
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V	50 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

DIODE GEN PURP 50V 35A DO203AB

Part	Speed	Speed	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor 1N1183	Standard Recovery >500ns	200 mA	DO-203AB, DO-5, Stud	Chassis, Stud Mount	50 V	35 A	DO-203AB	10 µA	Standard	190 °C	-65 C
GeneSiC Semiconductor 1N1183A	Standard Recovery >500ns	200 mA	DO-203AB, DO-5, Stud	Chassis, Stud Mount	50 V	40 A	DO-203AB	10 µA	Standard	200 C	-65 C	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 40A Chassis, Stud Mount DO-203AB

Technical documentation and resources