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G3F60MT06J-TR

G3F60MT06J-TR

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GeneSiC Semiconductor

650V 55M TO-263-7 G3F SIC MOSFET

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G3F60MT06J-TR

G3F60MT06J-TR

Active
GeneSiC Semiconductor

650V 55M TO-263-7 G3F SIC MOSFET

Find alt

Description

General part information

G3F60MT06J-TR

650V 55M TO-263-7 G3F SIC MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationG3F60MT06J-TR
Current - Continuous Drain (Id) (Tc)44 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On)15 V
Drive Voltage (Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)45 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1322 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)155 W
QualificationAEC-Q101
Rds On (Max)75 mOhm
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)4.3 V

Pricing

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CAD

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Documents

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