Specification	IRFD112

Current - Continuous Drain (Id) (Tc)	800 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7 nC
Input Capacitance (Ciss) (Max)	135 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	Hexdip, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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