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STMICROELECTRONICS STTH30L06GY-TR

IPB60R165CPATMA1

LTB
INFINEON

POWER MOSFET, N CHANNEL, 650 V, 21 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT

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STMICROELECTRONICS STTH30L06GY-TR

IPB60R165CPATMA1

LTB
INFINEON

POWER MOSFET, N CHANNEL, 650 V, 21 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT

Find alt

Description

General part information

IPB60R165CPATMA1

The IPB60R165CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB60R165CPATMA1
Current - Continuous Drain (Id) (Tc)21 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)52 nC
Input Capacitance (Ciss) (Max)2000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NamePG-TO263-3-2
Power Dissipation (Max)192 W
Rds On (Max)165 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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