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CY7C1021D-10VXIT

CY7C1021D-10VXIT

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INFINEON

SRAM, ASYNCHRONOUS SRAM, 1 MBIT, 64K X 16BIT, SOJ, 44 PINS, 4.5 V

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CY7C1021D-10VXIT

CY7C1021D-10VXIT

Active
INFINEON

SRAM, ASYNCHRONOUS SRAM, 1 MBIT, 64K X 16BIT, SOJ, 44 PINS, 4.5 V

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Description

General part information

CY7C1021D-10VXIT

CY7C1021D-10VXIT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The device is suitable for interfacing with processors that have TTL I/P levels.

Technical Specifications

Parameters and characteristics for this part

SpecificationCY7C1021D-10VXIT
Access Time10 ns
Memory Depth64 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size1 Mbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name44-SOJ, 44-BSOJ
Package Width10.16 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)5.5 V
Voltage - Supply (Minimum)4.5 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

Pricing

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