Description
General part information
CY7C1021D-10VXIT
CY7C1021D-10VXIT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The device is suitable for interfacing with processors that have TTL I/P levels.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY7C1021D-10VXIT |
|---|---|
| Access Time | 10 ns |
| Memory Depth | 64 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 10.16 mm |
| Package Name | 44-SOJ, 44-BSOJ |
| Package Width | 10.16 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 5.5 V |
| Voltage - Supply (Minimum) | 4.5 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
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