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BSC028N06NSTATMA1

BSC028N06NSTATMA1

LTB
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 2.8 MOHM;

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BSC028N06NSTATMA1

BSC028N06NSTATMA1

LTB
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; SUPERSO8 5X6 PACKAGE; 2.8 MOHM;

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Description

General part information

BSC028N06NSTATMA1

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAXfeature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC028N06NSTATMA1
Current - Continuous Drain (Id) (Ta)24 A
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)49 nC, 49 nC
Input Capacitance (Ciss) (Max)3375 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-7
Power Dissipation (Max)3 W, 100 W
Rds On (Max)2.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.3 V

Pricing

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CAD

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