BYT51M-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A SOD57
BYT51M-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A SOD57
Description
General part information
BYT51M-TAP
DIODE AVALANCHE 1KV 1.5A SOD57
Technical Specifications
Parameters and characteristics for this part
| Specification | BYT51M-TAP |
|---|---|
| Current - Average Rectified (Io) | 1.5 A |
| Current - Reverse Leakage | 1 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Axial, SOD-57 |
| Package Name | SOD-57 |
| Reverse Recovery Time (trr) | 4 µs |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1 kV |
| Voltage - Forward (Vf) (Max) | 1.1 V |
Pricing
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CAD
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Documents
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