RBA160N10EANS-4UA03#HB0
ActiveRenesas Electronics Corporation
REXFET-1 N-CH MOSFET 100V, 160A,
RBA160N10EANS-4UA03#HB0
ActiveRenesas Electronics Corporation
REXFET-1 N-CH MOSFET 100V, 160A,
Description
General part information
RBA160N10EANS-4UA03#HB0
REXFET-1 N-CH MOSFET 100V, 160A,
Technical Specifications
Parameters and characteristics for this part
| Specification | RBA160N10EANS-4UA03#HB0 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 91 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 4.9 mm |
| Package Name | 8-DFN |
| Package Width | 5.75 mm |
| Power Dissipation (Max) | 165 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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