Specification	SGT080R70ILB

Current - Continuous Drain (Id) (Tc)	29 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Max)	6.2 nC
Input Capacitance (Ciss) (Max)	225 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Length	8 mm
Package Name	PowerFlat™
Package Width	8 mm
Power Dissipation (Max)	188 W
Rds On (Max)	80 mOhm
Technology	GaNFET (Gallium Nitride), MOSFET (Metal Oxide)
Vgs (Max) Negative	-6 V
Vgs (Max) Positive	7 V
Vgs(th) (Max)	2.5 V

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