Specification	STH65N050DM9-7AG

Current - Continuous Drain (Id) (Tc)	51 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4680 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	H2PAK-7, D2PAK
Power Dissipation (Max)	266 W
Qualification	AEC-Q101
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

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