Description
General part information
IPF129N20NM6ATMA1
IPF129N20NM6OptiMOS™ 6 200 Vis setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance. The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such astelecom,server,solar, oraudio. Additionally, the combination of wide SOA and industry-leading RDS(on)result in a perfect fit for static switching applications such asBMS.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPF129N20NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11 A |
| Current - Continuous Drain (Id) (Tc) | 87 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 56 nC |
| Input Capacitance (Ciss) (Max) | 3800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | PG-TO263-7-3, TO-263-7, D2PAK |
| Power Dissipation (Max) | 234 W, 3.8 W |
| Rds On (Max) | 12 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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