Specification	SI2308DS-T1-E3

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	240 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	1.25 W
Rds On (Max)	160 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

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