IXTH6N90A

Obsolete

LITTELFUSE

MOSFET N-CH 900V 6A TO247

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IXTH6N90A

Obsolete

LITTELFUSE

MOSFET N-CH 900V 6A TO247

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH6 Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH6N90A

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	130 nC
Input Capacitance (Ciss) (Max)	2600 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	180 W
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTH6 Series

DiscMosfet N-CH Std-HiVoltage TO-247AD

Part	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Feature	Rds On (Max)	Package / Case	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package Name	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)
LITTELFUSE IXTH6N100D2	95 nC	N-Channel	-55 °C	150 °C	6 A	Depletion Mode	2.2 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2650 pF	Through Hole	1000 V	TO-247 (IXTH)	300 W
LITTELFUSE IXTH6N150	67 nC	N-Channel	-55 °C	150 °C	6 A		3.5 Ohm 3.5 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2230 pF	Through Hole	1500 V	TO-247 (IXTH)	540 W	10 V	5 V
LITTELFUSE IXTH6N120	56 nC	N-Channel	-55 °C	150 °C	6 A		2.6 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	1950 pF	Through Hole	1200 V	TO-247 (IXTH)	300 W	10 V	5 V
LITTELFUSE IXTH6N120	56 nC	N-Channel	-55 °C	150 °C	6 A		2.6 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	1950 pF	Through Hole	1200 V	TO-247 (IXTH)	300 W	10 V	5 V
LITTELFUSE IXTH6N150	67 nC	N-Channel	-55 °C	150 °C	6 A		3.5 Ohm 3.5 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2230 pF	Through Hole	1500 V	TO-247 (IXTH)	540 W	10 V	5 V
LITTELFUSE IXTH6N50D2	96 nC	N-Channel	-55 °C	150 °C	6 A	Depletion Mode	500 mOhm	TO-247-3	20 V	MOSFET (Metal Oxide)	2800 pF	Through Hole	500 V	TO-247 (IXTH)	300 W
LITTELFUSE IXTH6N90	130 nC	N-Channel	-55 °C	150 °C	6 A		1.8 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2600 pF	Through Hole	900 V	TO-247 (IXTH)	180 W	10 V	4.5 V
LITTELFUSE IXTH6N100D2	95 nC	Depletion Mode N-Channel	-55 °C	150 °C	6 A		2.2 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2650 pF	Through Hole	1000 V	TO-247 (IXTH)	300 W
LITTELFUSE IXTH6N50D2	96 nC	Depletion Mode N-Channel	-55 °C	150 °C	6 A		500 mOhm	TO-247-3	20 V	MOSFET (Metal Oxide)	2800 pF	Through Hole	500 V	TO-247 (IXTH)	300 W
LITTELFUSE IXTH6N80A	130 nC	N-Channel	-55 °C	150 °C	6 A		1.4 Ohm	TO-247-3	20 V	MOSFET (Metal Oxide)	2800 pF	Through Hole	800 V	TO-247 (IXTH)	180 W	10 V	4.5 V

Pricing

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CAD

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