CoolSIC™ MOSFET650 V, 260 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package offering is complemented by the availability of TOLL also forCoolMOS™andCoolGaN™, making it an appealing one stop shop option for various systems. This 260 mΩ product is suitable for specific high efficiency designs in low power systems, like home appliances or low power industrial drives. It allows optimizing the performance per $, in hard commuting half and full bridge topologies, as well as increasing the efficiency of systems adopting topologies like the emerging Totem Pole PFC.