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RTU002P02T106

RTU002P02T106

NRND
Rohm Semiconductor

MOSFET P-CH 20V 250MA UMT3

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RTU002P02T106

RTU002P02T106

NRND
Rohm Semiconductor

MOSFET P-CH 20V 250MA UMT3

Find alt

Description

General part information

RTU002P02T106

MOSFET P-CH 20V 250MA UMT3

Technical Specifications

Parameters and characteristics for this part

SpecificationRTU002P02T106
Current - Continuous Drain (Id) (Ta)250 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max)50 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-70, SOT-323
Package NameUMT3
Power Dissipation (Max)200 mW
Rds On (Max)1.5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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