Specification	IRF8513PBF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	11 A
Current - Continuous Drain (Id) (Typical)	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	8.6 nC
Input Capacitance (Ciss) (Max)	766 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	1.5 W
Power - Max (Value 2)	2.4 W
Rds On (Max)	15.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.35 V

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