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Description

General part information

MCT06P10HE3-TP

P-CHANNEL MOSFET,SOT-223

Technical Specifications

Parameters and characteristics for this part

SpecificationMCT06P10HE3-TP
Current - Continuous Drain (Id) (Ta)6 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)24.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1369 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power Dissipation (Max)1.9 W
QualificationAEC-Q101
Rds On (Max)210 mOhm, 210 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

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