Description
General part information
ISZ330N12LM6ATMA1
This is a logic level 120 V MOSFET inPQFN 3.3 x 3.3 packagingwith 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’sOptiMOS™ 6 power MOSFET family.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ330N12LM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5.7 A |
| Current - Continuous Drain (Id) (Tc) | 24 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On) | 3.3 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10.1 nC |
| Input Capacitance (Ciss) (Max) | 650 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8 FL |
| Power Dissipation (Max) | 2.5 W, 43 W |
| Rds On (Max) | 33 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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