SCTH50N120-7
ObsoleteSTMicroelectronics
SICFET N-CH 1200V 65A H2PAK-7
SCTH50N120-7
ObsoleteSTMicroelectronics
SICFET N-CH 1200V 65A H2PAK-7
Description
General part information
SCTH50N120-7
SICFET N-CH 1200V 65A H2PAK-7
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTH50N120-7 |
|---|---|
| Current - Continuous Drain (Id) | 65 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 122 nC |
| Input Capacitance (Ciss) (Max) | 1900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | H2PAK-7, D2PAK |
| Power Dissipation (Max) | 270 W |
| Rds On (Max) | 69 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 5.1 V |
Pricing
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