TP65H030G4PQS-TR
ActiveRenesas Electronics Corporation
GANFET N-CH 650V 55.7A TOLL
TP65H030G4PQS-TR
ActiveRenesas Electronics Corporation
GANFET N-CH 650V 55.7A TOLL
Description
General part information
TP65H030G4PQS-TR
GANFET N-CH 650V 55.7A TOLL
Technical Specifications
Parameters and characteristics for this part
| Specification | TP65H030G4PQS-TR |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 55.7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 24.5 nC |
| Input Capacitance (Ciss) (Max) | 1500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-PowerSFN |
| Package Name | Toll |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) | 41 mOhm |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.8 V |
Pricing
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CAD
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