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BSDH10G120E2

BSDH10G120E2

Active
Bourns Inc.

DIODE SIL CARB 1200V 10A TO220

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BSDH10G120E2

BSDH10G120E2

Active
Bourns Inc.

DIODE SIL CARB 1200V 10A TO220

Find alt

Description

General part information

BSDH10G120E2

DIODE SIL CARB 1200V 10A TO220

Technical Specifications

Parameters and characteristics for this part

SpecificationBSDH10G120E2
Capacitance481 pF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-220-2
Package NameTO-220-2
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.6 V

Pricing

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CAD

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