HGTD3N60C3
ActiveON Semiconductor
IGBT 600V 6A IPAK
HGTD3N60C3
ActiveON Semiconductor
IGBT 600V 6A IPAK
Description
General part information
HGTD3N60C3
IGBT 600 V 6 A 33 W Through Hole IPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTD3N60C3 |
|---|---|
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Pulsed (Icm) | 24 A |
| Gate Charge | 13.8 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | IPAK |
| Power - Max | 33 VA |
| Reverse Recovery Time (trr) | 10 ns |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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