
TPH3206LSGB
ObsoleteRenesas Electronics Corporation
GANFET N-CH 650V 16A 3PQFN

TPH3206LSGB
ObsoleteRenesas Electronics Corporation
GANFET N-CH 650V 16A 3PQFN
Description
General part information
TPH3206LSGB
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount 3-PQFN (8x8)
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH3206LSGB |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 16 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6.2 nC |
| Input Capacitance (Ciss) (Max) | 720 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-PowerDFN |
| Package Length | 8 mm |
| Package Name | 3-PQFN |
| Package Width | 8 mm |
| Power Dissipation (Max) | 81 W |
| Rds On (Max) | 180 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 18 V |
| Vgs(th) (Max) | 2.6 V |
Pricing
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CAD
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Documents
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