
TEFT4300
ActiveVishay Semiconductor Opto Division
PHOTOTRANSISTOR 875 TO 1000 NM

TEFT4300
ActiveVishay Semiconductor Opto Division
PHOTOTRANSISTOR 875 TO 1000 NM
Description
General part information
TEFT4300
PHOTOTRANSISTOR 875 TO 1000 NM
Technical Specifications
Parameters and characteristics for this part
| Specification | TEFT4300 |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| Current - Dark (Id) (Max) | 200 nA |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package Diameter | 3 mm |
| Package Name | Radial |
| Power - Max | 100 mW |
| Viewing Angle | 60 ° |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Wavelength | 925 nm |
Pricing
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CAD
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