AR3PJHM3_A/I
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.8A TO277A
AR3PJHM3_A/I
ActiveVishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.8A TO277A
Description
General part information
AR3PJHM3_A/I
DIODE AVALANCHE 600V 1.8A TO277A
Technical Specifications
Parameters and characteristics for this part
| Specification | AR3PJHM3_A/I |
|---|---|
| Capacitance | 44 pF |
| Current - Average Rectified (Io) | 1.8 A |
| Current - Reverse Leakage | 10 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | TO-277A (SMPC) |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 140 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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