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Description

General part information

GSFP2601

MOSFET, P-CH, SINGLE, -90.00A, -

Technical Specifications

Parameters and characteristics for this part

SpecificationGSFP2601
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)225 nC
Input Capacitance (Ciss) (Max)14000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length4.9 mm
Package Name8-PPAK
Package Width5.8 mm
Power Dissipation (Max)41.67 W
Rds On (Max)2.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1 V

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CAD

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Documents

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