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SQ2337CES-T1_GE3

SQ2337CES-T1_GE3

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Vishay Dale

MOSFET P-CH 80V 2.2A SOT23-3

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SQ2337CES-T1_GE3

SQ2337CES-T1_GE3

Active
Vishay Dale

MOSFET P-CH 80V 2.2A SOT23-3

Find alt

Description

General part information

SQ2337CES-T1_GE3

MOSFET P-CH 80V 2.2A SOT23-3

Technical Specifications

Parameters and characteristics for this part

SpecificationSQ2337CES-T1_GE3
Current - Continuous Drain (Id) (Tc)2.2 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)18 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)620 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power Dissipation (Max)3 W
QualificationAEC-Q101
Rds On (Max)290 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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