
IRFW530ATM
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

IRFW530ATM
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
IRFW530ATM
N-CHANNEL POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFW530ATM |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 14 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 36 nC, 36 nC |
| Input Capacitance (Ciss) (Max) | 790 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power Dissipation (Max) | 55 W, 3.8 W |
| Rds On (Max) | 110 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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