1SS307(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA S-MINI

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Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA S-MINI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1SS307(TE85L,F)	1SS307 Series

Capacitance @ Vr, F	6 pF	6 pF
Current - Average Rectified (Io)	100 mA	100 mA
Current - Reverse Leakage @ Vr	10 nA	10 nA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction	125 °C	125 - 150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SC-79, SOD-523, SOT-23-3, TO-236-3, SC-59
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	S-Mini	SC-79, S-Mini
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	30 V	30 - 80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V	1.3 V

DIODE GEN PURP 80V 100MA SC79

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Capacitance @ Vr, F	Speed	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Package / Case	Mounting Type	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS307E,L3F	80 V	150 °C	6 pF	Any Speed	200 mA	1.3 V	100 mA	SC-79, SOD-523	Surface Mount	SC-79	Standard	10 nA
Toshiba Semiconductor and Storage 1SS307(TE85L,F)	30 V	125 °C	6 pF	Any Speed	200 mA	1.3 V	100 mA	SC-59, SOT-23-3, TO-236-3	Surface Mount	S-Mini	Standard	10 nA

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General part information

Diode 30 V 100mA Surface Mount S-Mini

Technical documentation and resources