STT5N2VH5

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STMicroelectronics

MOSFET N-CH 20V SOT23-6

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STMicroelectronics

MOSFET N-CH 20V SOT23-6

Technical Specifications

Parameters and characteristics for this part

Specification	STT5N2VH5

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	367 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	700 mV

MOSFET N-CH 20V SOT23-6

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Rds On (Max) @ Id, Vgs
STMicroelectronics STT5N2VH5	2.5 V, 4.5 V	Surface Mount	8 V	SOT-23-6	367 pF	20 V	N-Channel	4.6 nC	700 mV	1.6 W	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-6	30 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 5A (Tj) 1.6W (Tc) Surface Mount SOT-23-6

Technical documentation and resources