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Description

General part information

DI080N10PQ-AQ

DI080N10PQ-AQ

Technical Specifications

Parameters and characteristics for this part

SpecificationDI080N10PQ-AQ
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)75 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)3742 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-QFN
Package Width6 mm
Power Dissipation (Max)60 W
QualificationAEC-Q101
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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