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INFINEON IPL60R065C7AUMA1

BSC0503NSIATMA1

Obsolete
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 3 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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INFINEON IPL60R065C7AUMA1

BSC0503NSIATMA1

Obsolete
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 3 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Description

General part information

BSC0503NSIATMA1

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0503NSIATMA1
Current - Continuous Drain (Id) (Ta)22 A
Current - Continuous Drain (Id) (Tc)88 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)1300 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-6
Power Dissipation (Max)36 W, 2.5 W
Rds On (Max)3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources