STTH8L02DDJFY-TR

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STMicroelectronics

DIODE ARRAY GP 200V 4A PWRFLAT

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STMicroelectronics

DIODE ARRAY GP 200V 4A PWRFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STTH8L02DDJFY-TR

Current - Average Rectified (Io) (per Diode)	4 A
Current - Reverse Leakage @ Vr	3 µA
Diode Configuration	2 Independent
Grade	Automotive
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerVDFN
Qualification	AEC-Q101
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	PowerFlat™ (5x6) Dual
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE ARRAY GP 200V 4A PWRFLAT

Part	Technology	Supplier Device Package	Package / Case	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Speed	Grade	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
STMicroelectronics STTH8L02DDJFY-TR	Standard	PowerFlat™ (5x6) Dual	8-PowerVDFN	2 Independent	4 A	1.1 V	40 ns	Surface Mount, Wettable Flank	200 V	AEC-Q101	200 mA, 500 ns	Automotive	3 µA	-40 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 200 V 4A Surface Mount, Wettable Flank 8-PowerVDFN

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